SiC

SiC

SiC

Major capability parameter
Growth method MOCVD
Crystal Structure M6
Unit cell constant a=3.08 Å     c=15.08 Å
Sequence ABCACB
Direction <0001> 3.5 º
With clearance 2.93 eV
Hardness 9.2(mohs)
Heat travels @300K 5 W/ cm.k
Dielectric constants e(11)=e(22)=9.66 e(33)=10.33
Size 10×3,10×5,10×10,15×15,,20×15,20×20,
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal orientation <001>±0.5º
redirection precision ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)
Pack 100 clean bag,1000 exactly clean bag