SiO2

SiO2

SiO2

Major capability parameter
Growth methodhydro-thermal method
Crystal StructureM6
Unit cell constanta=4.914Å    c=5.405 Å
Melt point(℃)1610℃
Density2.684g/cm3
Hardness7(mohs)
Thermal conductivity0.0033cal/cm℃
Planned constant1200uv/℃(300℃)
Index of refraction1.544
Thermal expansionα11:13.71×10­6 / ℃ α33:7.48×10­6 /℃
Frequency constant1661(kHz/mm)
Crystal orientationY、X or Z,30º~42.75 º ±5
PolishingSingle or double  Ra<10Å
Thickness0.5mm±0.05mm TTV<5um
DiameterΦ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm